unisonic technologies co., ltd UT5003 power mosfet www.unisonic.com.tw 1 of 8 copyright ? 2009 unisonic technologies co., ltd qw-r502-167.b dual enhancement mode (n-channel/p-channel) ? description the UT5003 can provide excellent r ds (on) and low gate charge by using utc?s advanced trench technology. this device is suitable for use as a load switch or in pwm applications. ? features * n-channel: 30v/7a r ds(on) = 27.5m ? @ v gs =10v r ds(on) = 40m ? @ v gs = 4.5v * p-channel: -30v/-5a r ds(on) = 45m ? @ v gs = -10v r ds(on) = 80m ? @ v gs = -4.5v * super high dense cell design * reliable and rugged ? symbol ? ordering information ordering number lead free halogen free package packing UT5003l-s08-r UT5003g-s08-r sop-8 tape reel
UT5003 power mosfet unisonic technologies co., ltd 2 of 8 www.unisonic.com.tw qw-r502-167.b ? pin configuration
UT5003 power mosfet unisonic technologies co., ltd 3 of 8 www.unisonic.com.tw qw-r502-167.b ? absolute maximum ratings (t a =25c unless otherwise specified) n-channel: parameter symbol ratings unit drain-source voltage v dss 30 v gate-source voltage v gss 20 v continuous drain current (note3) t c =25c i d 7 a pulsed drain current (note3) t c =25c i dm 20 a power dissipation p d 2 w junction temperature t j +150 storage temperature t stg -55 ~ +150 p-channel: parameter symbol ratings unit drain-source voltage v dss -30 v gate-source voltage v gss 20 v continuous drain current (note3) t c =25c i d -5 a pulsed drain current (note3) t c =25c i dm -20 a power dissipation p d 2 w junction temperature t j +150 storage temperature t stg -55 ~ +150 note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? thermal data parameter symbol min typ max unit junction to ambient (note3) ja 62.5 /w ? electrical characteristics (t a =25c, unless otherwise specified) n-channel parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v, i d =250ua 30 v drain-source leakage current i dss v ds =24v, v gs =0v 1 ua gate-source leakage current i gss v ds =0v, v gs =20v 100 na on characteristics gate threshold voltage v gs(th) v ds =v gs , i d =250ua 1 1.5 2.5 v v gs =10v, i d =7a 20.5 27.5 m ? drain-source on-state resistance (note2) r ds(on) v gs =4.5v, i d =6a 30 40 m ? dynamic characteristics input capacitance c iss 680 pf output capacitance c oss 105 pf reverse transfer capacitance c rss v gs =0v, v ds =15v, f=1mhz 75 pf switching characteristics turn-on delay time (note2) t d(on) 4.6 7 ns turn-on rise time t r 4 6 ns turn-off delay time t d(off) 20 30 ns turn-off fall time t f v ds =10v, v gs =10v, i d P 1a, r g =3 ? 5 8 ns total gate charge (note2) q g 14 nc gate-source charge q gs 1.9 nc gate-drain charge q gd v ds =0.5*bv dss, v gs =10v, i d =7a 3.3 nc
UT5003 power mosfet unisonic technologies co., ltd 4 of 8 www.unisonic.com.tw qw-r502-167.b ? electrical characteristics(cont.) parameter symbol test conditions min typ max unit source- drain diode ratings and characteristics drain-source diode forward voltage(note2) v sd i s =1a, v gs =0v 1 v diode continuous forward current i s 1.3 a p-channel parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v, i d =-250ua -30 v drain-source leakage current i dss v ds =-24v, v gs =0v -1 ua gate-source leakage current i gss v ds =0v, v gs =20v 100 na on characteristics gate threshold voltage v gs(th) v ds =v gs , i d =-250ua -1 -1.5 -2.5 v v gs =-10v, i d =-5a 37.5 45 m ? drain-source on-state resistance (note2) r ds(on) v gs =-4.5v, i d =-4a 62 80 m ? dynamic characteristics input capacitance c iss 780 pf output capacitance c oss 145 pf reverse transfer capacitance c rss v gs =0v, v ds =-15v, f=1mhz 79 pf switching characteristics turn-on delay time (note2) t d(on) 7.7 11.5 ns turn-on rise time t r 5.7 8.5 ns turn-off delay time t d(off) 20 30 ns turn-off fall time t f v ds =-10v, v gs =-10v, i d P 1a, r g =3 ? 9.5 14 ns total gate charge (note2) q g 15.1 nc gate-source charge q gs 2.1 nc gate-drain charge q gd v ds =0.5*bv dss, v gs =-10v, i d =-5a 4.0 nc source- drain diode ratings and characteristics drain-source diode forward voltage(note2) v sd i s =-1a, v gs =0v -1 v diode continuous forward current i s -1.3 a notes: 1. pulse width limited by t j(max) 2. pulse width 300us, duty cycle 2%. 3. surface mounted on 1in 2 pad area, t 10sec .
UT5003 power mosfet unisonic technologies co., ltd 5 of 8 www.unisonic.com.tw qw-r502-167.b ? typical characteristics n-channel: v gs =3v 3.5v 4v 4.5v 5.0v 6.0v 10v 30 25 20 15 10 5 0 0 1 23 45 drain source voltage,v ds (v) drain current,i d (a) on-region characteristics v gs =3.5v 4v 4.5v 5.0v 6.0v 7.0v 10v 30 24 18 12 6 0 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 on-resistance variation with drain current and gate voltage drain current,i d (a) normalized drain-source on- resistance,r ds(on) normalized drain-source on- resistance,r ds(on) on-resistance,r ds(on) ( ) v ds =10v t a =-55 125 25 30 25 20 15 10 5 0 1 1.5 2.0 2.5 3.0 3.5 gate-to-source voltage,v gs (v) drain current,i d (a) transfer characteristics body diode forward voltage variation with source current and temperature 100 10 1 0.1 0.01 0.001 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 body diode forward voltage,v sd (v) reverse drain current,i s (a) v gs =0v t a =125 25 -55
UT5003 power mosfet unisonic technologies co., ltd 6 of 8 www.unisonic.com.tw qw-r502-167.b ? typical characteristics(cont.) 15v v ds =5v 10v i d =7a gate charge characteristics 10 8 6 4 2 0 0481216 gate charge,q g (nc) 1000 900 800 700 600 500 400 300 200 100 0 0 5 10 15 20 25 30 drain-to-source voltage,v ds (v) capacitance characteristics c rss c oss c iss f=1mh z v gs =v single pulse r ja =135 /w t a =25 single pulse maximum power dissipation 50 40 30 20 10 0 0.001 0.01 0.1 time,t 1 (sec) 1 10 100 1000 peak transient power,p (pk) (w) dc 10s 1s 100ms 10ms 1ms 100 s r ds(on) limit v gs =10v single pulse r ja =135 /w t a =25 0.1 0.01 0.1 1 10 100 drain current,i d (a) 1 10 100 drain-source voltage,v ds (v) maximum safe operating area p-channel drain current,-i d (a) normalized drain-source on- resistance,r ds(on)
UT5003 power mosfet unisonic technologies co., ltd 7 of 8 www.unisonic.com.tw qw-r502-167.b ? typical characteristics(cont.) i d =-5a v gs =-10v 1.6 1.4 1.2 1.0 0.8 0.6 -50 -25 0 25 50 75 100 125 150 junction temperaturemt j ( ) on-resistance variation with temperature normalized drain-source on- resistance,r ds(on) i d =-5a t a =125 25 0.2 0.15 0.1 0.05 0 2 46 8 10 gate-to-source voltage,-v gs (v) on-resistance,r ds(on) ( ) on-resistance variation with gate- to-source voltage v ds =-10v t a =-55 125 25 30 25 20 15 10 5 0 1.5 3.5 2.5 4.5 5.5 gate-to-source voltage,-v gs (v) drain current,-i d (a) transfer characteristics body diode forward voltage variation with source current and temperature 100 10 1 0.1 0.01 0.001 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 body diode forward voltage,-v sd (v) reverse drain current,-i s (a) v gs =0v t a =125 25 -55 -10v -15v v ds =-5v i d =-5a 10 8 6 4 2 0 051015 20 gate charge characteristics gate source voltage,-v gs (v) gate charge,q g (nc) capacitance,c (pf) capacitance characteristics drain-to-source voltage,-v ds (v) c oss c rss c iss 0 200 400 600 800 1000 1200 0510 15 20 f=1mh z v gs =v
UT5003 power mosfet unisonic technologies co., ltd 8 of 8 www.unisonic.com.tw qw-r502-167.b ? typical characteristics(cont.) single pulse r ja =135 /w t a =25 single pulse maximum power dissipation 50 40 30 20 10 0 0.001 0.01 0.1 time,t 1 (sec) 1 10 100 1000 peak transient power,p (pk) (w) dc 10s 1s 100ms 10ms 1ms 100 s r ds(on) limit v gs =-10v single pulse r ja =135 /w t a =25 0.1 0.01 0.1 1 10 100 drain current,-i d (a) 110100 drain-source voltage,-v ds (v) maximum safe operating area normalized effective transient thermal resistance,r (t) utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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